2025-12-5 10.1.6.65
Code of China Chinese Standard Classification Professional Classification ICS Classification Latest
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Standard No. Title Price(USD) Delivery Status Add to Cart
GB/T 1558-2023 Test method for substitutional carbon content in silicon by infrared absorption 165.0 via email in 1~3 business day valid,,2024-7-1
GB/T 35306-2023 Determination of carbon and oxygen content in single crystal silicon—Low temperature fourier transform infrared spectrometry method 170.0 via email in 1~3 business day valid,,2024-3-1
GB/T 24582-2023 Test method for measuring surface metal impurity content of polycrystalline silicon—Acid extraction-inductively coupled plasma mass spectrometry method 170.0 via email in 1~3 business day valid,,2024-3-1
GB/T 42274-2022 Determination of the content and distribution of trace elements (magnesium, gallium) in aluminum nitride materials—Secondary ion mass spectrometry 165.0 via email in 1~3 business day valid,,2023-4-1
GB/T 42276-2022 Determination of fluorine ion and chloride ion in silicon nitride powder—Ion chromatography method 165.0 via email in 1~3 business day valid,,2023-4-1
GB/T 42263-2022 Determination of nitrogen content in silicon single crystal—Secondary ion mass spectrometry method 165.0 via email in 1~3 business day valid,,2023-4-1
GB/T 24581-2022 Test method for Ⅲ and Ⅴ impurities content in single crystal silicon—Low temperature FT-IR analysis method 165.0 via email in 1~3 business day valid,,2022-10-1
GB/T 41153-2021 Determination of boron,aluminum and nitrogen impurity content in silicon carbide single crystal―Secondary ion mass spectrometry 105.0 via email in 1~3 business day valid,,2022-7-1
GB/T 39145-2020 Test method for the content of surface metal elements on silicon wafers—Inductively coupled plasma mass spectrometry 165.0 via email in 1~3 business day valid,,2021-9-1
GB/T 39144-2020 Test method for magnesium content in gallium nitride materials—Secondary ion mass spectrometry 105.0 via email in 1~3 business day valid,,2021-9-1
GB/T 38976-2020 Test method for the oxygen concentration in silicon materials—Inert gas fusion infrared detection method 105.0 via email in 1~3 business day valid,,2021-6-1
GB/T 37385-2019 Test method for chloride content of silicon—Ion chromatography method 165.0 via email in 1~3 business day valid,,2020-2-1
GB/T 37211.1-2018 Methods for chemical analysis of germanium metal—Part 1:Determination of arsenic content—Arsenic stain method 100.0 via email in 1~3 business day valid,,2019-11-1
GB/T 37211.2-2018 Methods for chemical analysis of germanium metal—Part 2:Determination of aluminium,iron,copper,nickle,lead,cadmium,magnesium,cobalt,indium,zinc content—Inductively coupled plasma mass spectrometry method 160.0 via email in 1~3 business day valid,,2019-11-1
GB/T 4059-2018 Test method for phosphorus content in polycrystalline silicon by zone-melting method under controlled atmosphere 120.0 via email in 1~3 business day valid,,2019-11-1
GB/T 37049-2018 Test method for the content of metal impurity in electronic grade polysilicon—Inductively coupled-plasma mass spectrometry method 165.0 via email in 1~3 business day valid,,2019-4-1
GB/T 4060-2018 Test method for boron content in polycrystalline silicon by vacuum zone-melting method 165.0 via email in 1~3 business day valid,,2019-6-1
GB/T 1557-2018 Test method for determining interstitial oxygen content in silicon by infrared absorption 165.0 via email in 1~3 business day valid,,2019-6-1
GB 2143-1980 Determination of sulphur content in tellurium--Barium sulfate turbidimetry 184.0 via email in 1~3 business day superseded,1996-3-12,1981-10-1
YS/T 227.9-1994 Determination of tellurium content in tellurium--Potassium dichromate-ammonium ferrous sulfate volumetric method 15.0 via email in 1~3 business day superseded,2011-3-1,1996-3-12
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GB/T 1558-2023 Test method for substitutional carbon content in silicon by infrared absorption  
  Issued on: 2023-12-28   Price(USD): 165.0
GB/T 35306-2023 Determination of carbon and oxygen content in single crystal silicon—Low temperature fourier transform infrared spectrometry method 
  Issued on: 2023-08-06   Price(USD): 170.0
GB/T 24582-2023 Test method for measuring surface metal impurity content of polycrystalline silicon—Acid extraction-inductively coupled plasma mass spectrometry method 
  Issued on: 2023-08-06   Price(USD): 170.0
GB/T 42274-2022 Determination of the content and distribution of trace elements (magnesium, gallium) in aluminum nitride materials—Secondary ion mass spectrometry 
  Issued on: 2022-12-30   Price(USD): 165.0
GB/T 42276-2022 Determination of fluorine ion and chloride ion in silicon nitride powder—Ion chromatography method 
  Issued on: 2022-12-30   Price(USD): 165.0
GB/T 42263-2022 Determination of nitrogen content in silicon single crystal—Secondary ion mass spectrometry method 
  Issued on: 2022-12-30   Price(USD): 165.0
GB/T 24581-2022 Test method for Ⅲ and Ⅴ impurities content in single crystal silicon—Low temperature FT-IR analysis method 
  Issued on: 2022-03-09   Price(USD): 165.0
GB/T 41153-2021 Determination of boron,aluminum and nitrogen impurity content in silicon carbide single crystal―Secondary ion mass spectrometry 
  Issued on: 2021-12-31   Price(USD): 105.0
GB/T 39145-2020 Test method for the content of surface metal elements on silicon wafers—Inductively coupled plasma mass spectrometry 
  Issued on: 2020-10-11   Price(USD): 165.0
GB/T 39144-2020 Test method for magnesium content in gallium nitride materials—Secondary ion mass spectrometry 
  Issued on: 2020-10-11   Price(USD): 105.0
GB/T 38976-2020 Test method for the oxygen concentration in silicon materials—Inert gas fusion infrared detection method  
  Issued on: 2020-07-21   Price(USD): 105.0
GB/T 37385-2019 Test method for chloride content of silicon—Ion chromatography method 
  Issued on: 2019-03-25   Price(USD): 165.0
GB/T 37211.1-2018 Methods for chemical analysis of germanium metal—Part 1:Determination of arsenic content—Arsenic stain method 
  Issued on: 2018-12-28   Price(USD): 100.0
GB/T 37211.2-2018 Methods for chemical analysis of germanium metal—Part 2:Determination of aluminium,iron,copper,nickle,lead,cadmium,magnesium,cobalt,indium,zinc content—Inductively coupled plasma mass spectrometry method 
  Issued on: 2018-12-28   Price(USD): 160.0
GB/T 4059-2018 Test method for phosphorus content in polycrystalline silicon by zone-melting method under controlled atmosphere 
  Issued on: 2018-12-28   Price(USD): 120.0
GB/T 37049-2018 Test method for the content of metal impurity in electronic grade polysilicon—Inductively coupled-plasma mass spectrometry method 
  Issued on:   Price(USD): 165.0
GB/T 4060-2018 Test method for boron content in polycrystalline silicon by vacuum zone-melting method 
  Issued on: 2018-09-17   Price(USD): 165.0
GB/T 1557-2018 Test method for determining interstitial oxygen content in silicon by infrared absorption 
  Issued on: 2018-09-17   Price(USD): 165.0
GB 2143-1980 Determination of sulphur content in tellurium--Barium sulfate turbidimetry 
  Issued on:   Price(USD): 184.0
YS/T 227.9-1994 Determination of tellurium content in tellurium--Potassium dichromate-ammonium ferrous sulfate volumetric method 
  Issued on:   Price(USD): 15.0
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