Standard No.:	T/CIE 145-2022
English Name:	Measurement method of radiation induced traps by deep level transient spectroscopy
Chinese Name:	辐射诱生缺陷的深能级瞬态谱测试方法
Chinese Classification:	L40    Semiconductor discrete devices in general
Professional Classification:	T/    Social Organization Standard
ICS Classification:	31.080.01 31.080.01    Semiconductor devices in general 31.080.01
Source Content Issued by:	CIE
Issued on:	2022-12-31
Status:	valid
Target Language:	English
File Format:	PDF
Word Count:	7500 words
Translation Price(USD):	225.0
Delivery:	via email in 1~3 business day

本文件规定了利用电容瞬态深能级瞬态谱（DLTS）测试辐射诱生缺陷的方法和程序。
本文件适用于包含P-N结、肖特基结、MOS结构的半导体器件中辐射诱生深能级缺陷的测试。