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| Position: Chinese Standard in English/YS/T 543-2006 |
| YS/T 543-2006 Fine aluminum-1% silicon wire for semiconductor lend-bonding (English Version) | |||
| Standard No.: | YS/T 543-2006 | Status: | superseded remind me the status change
Email: |
| Target Language: | English | File Format: | |
| Word Count: | 3500 words | Translation Price(USD): | 100.0 remind me the price change
Email: |
| Implemented on: | 2006-10-11 | Delivery: | via email in 1~3 business day |
| → | → | → |
| Standard No.: | YS/T 543-2006 |
| English Name: | Fine aluminum-1% silicon wire for semiconductor lend-bonding |
| Chinese Name: | 半导体键合铝-1%硅细丝 |
| Chinese Classification: | H8 |
| Professional Classification: | YS Professional Standard - Non-ferrous Metal |
| ICS Classification: | 29.045 29.045 Semiconducting materials 29.045 |
| Issued on: | 2006-7-27 |
| Implemented on: | 2006-10-11 |
| Status: | superseded |
| Superseded by: | YS/T 543-2015 Standard specification for fine aluminum-1% silicon wire for semiconductor lead-bonding |
| Superseded on: | 2015-10-1 |
| Superseding: | GB/T 8646-1998 Fine aluminum-1% silicon wire for semiconductor lend-bonding |
| Target Language: | English |
| File Format: | |
| Word Count: | 3500 words |
| Translation Price(USD): | 100.0 |
| Delivery: | via email in 1~3 business day |
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| YS/T 543-2006 Fine aluminum-1% silicon wire for semiconductor lend-bonding (English Version) | |||
| Standard No. | YS/T 543-2006 | ||
| Status | superseded | ||
| Language | English | ||
| File Format | |||
| Word Count | 3500 words | ||
| Price(USD) | 100.0 | ||
| Implemented on | 2006-10-11 | ||
| Delivery | via email in 1~3 business day | ||
| Standard No. |
| YS/T 543-2006 |
| English Name |
| Fine aluminum-1% silicon wire for semiconductor lend-bonding |
| Chinese Name |
| 半导体键合铝-1%硅细丝 |
| Chinese Classification |
| H8 |
| Professional Classification |
| YS |
| ICS Classification |
| Issued by |
| Issued on |
| 2006-7-27 |
| Implemented on |
| 2006-10-11 |
| Status |
| superseded |
| Superseded by |
| YS/T 543-2015 Standard specification for fine aluminum-1% silicon wire for semiconductor lead-bonding |
| Superseded on |
| 2015-10-1 |
| Abolished on |
| Superseding |
| GB/T 8646-1998 Fine aluminum-1% silicon wire for semiconductor lend-bonding |
| Language |
| English |
| File Format |
| Word Count |
| 3500 words |
| Price(USD) |
| 100.0 |
| Keywords |
| YS/T 543-2006, YS 543-2006, YST 543-2006, YS/T543-2006, YS/T 543, YS/T543, YS543-2006, YS 543, YS543, YST543-2006, YST 543, YST543 |
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| Keywords: | ||
| YS/T 543-2006, YS 543-2006, YST 543-2006, YS/T543-2006, YS/T 543, YS/T543, YS543-2006, YS 543, YS543, YST543-2006, YST 543, YST543 | ||