2025-12-19 216.73.216.41
Code of China Chinese Standard Classification Professional Classification ICS Classification Latest
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Standard No. Title Price(USD) Delivery Status Add to Cart
GB/T 26071-2010 Mono-crystalline silicon as cut slices for photovoltaic solar cells 180.0 via email in 1~3 business day superseded,2019-4-1,2011-10-1
GB/T 24576-2009 Test method for measuring the Al fraction in AlGaAs on GaAs substrates by high resolution X-ray diffraction 170.0 via email in 1~3 business day valid,,2010-6-1
GB/T 26066-2010 Practice for shallow etch pit detection on silicon 120.0 via email in 1~3 business day valid,,2011-10-1
GB/T 24581-2009 Test method for low temperature FT-IR analysis of single crystal silicon for Ⅲ-Ⅴ impurities 170.0 via email in 1~3 business day superseded,2022-10-1,2010-6-1
GB/T 14844-1993 of semiconductor materials 264.0 via email in 1~3 business day superseded2019-11-01,2019-11-1,1994-9-1
GB/T 14264-1993 Semiconductor materials－Terms and definitions 280.0 via email in 1~3 business day superseded2010-06-01,2010-6-1,1993-1-2
GB/T 24578-2009 Test method for measuring surface metal contamination on silicon wafers by total reflection X-ray fluorescence spectroscopy 210.0 via email in 1~3 business day superseded,2017-1-1,2010-6-1
GB/T 14146-2009 Silicon epitaxial layers-determination of carrier concentration-mercury probe voltages-capacitance method 160.0 via email in 1~3 business day superseded,2021-12-1,2010-6-1
YS/T 985-2014 Polished reclaimed silicon wafers 220.0 via email in 1~3 business day valid,,2015-4-1
GB/T 1553-2009 Test methods for minority carrier lifetime in bulk germanium and silicon by measurement of photoconduetivity decay 210.0 via email in 1~3 business day superseded,2024-3-1,2010-6-1
GB/T 26068-2010 Test method for carrier recombination lifetime in silicon wafers by non-contact measurement of photoconductivity decay by microwave reflectance 390.0 via email in 1~3 business day superseded,2019-11-1,2011-10-1
GB/T 14847-2010 Test method for thickness of lightly doped silicon epitaxial layers on heavily doped silicon substrates by infrared reflectance 180.0 via email in 1~3 business day to be superseded,2026-5-1,2011-10-1
GB/T 4058-2009 Test method for detection of oxidation induced defects in polished silicon wafers 300.0 via email in 1 business day valid,,2010-6-1
GB/T 14141-2009 Test method for sheet resistance of silicon epitaxial,diffused and ion-implanted layers using a collinear four-probe array 180.0 via email in 1~3 business day valid,,2010-6-1
YS/T 838-2012 Cadmium Telluride 210.0 via email in 1~3 business day valid,,2013-3-1
YS/T 679-2008 Test methods for minority carrier diffusion length in extrinsic semiconductors by measurement of steady-steady-state surface photovoltage 210.0 via email in 1~3 business day superseded,2019-4-1,2008-9-1
GB/T 24580-2009 Test method for measuring Boron contamination in heavily doped n-type silicon substrates by secondary ion mass spectrometry 180.0 via email in 1~3 business day valid,,2010-6-1
GB/T 32279-2015 pecification for order entry format of silicon wafers 270.0 via email in 1~3 business day valid,,2017-1-1
GB/T 6617-2009 Test method for measuring resistivity of silicon wafer using spreading resistance probe 150.0 via email in 1~3 business day valid,,2010-6-1
GB/T 13388-2009 Method for measuring crystallographic orientation of flats on single-crystal silicon slices and wafers by X-ray techniques 180.0 via email in 1~3 business day valid,,2010-6-1
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GB/T 26071-2010 Mono-crystalline silicon as cut slices for photovoltaic solar cells 
  Issued on: 2011-1-10   Price(USD): 180.0
GB/T 24576-2009 Test method for measuring the Al fraction in AlGaAs on GaAs substrates by high resolution X-ray diffraction 
  Issued on: 2009-10-30   Price(USD): 170.0
GB/T 26066-2010 Practice for shallow etch pit detection on silicon 
  Issued on: 2011-1-1   Price(USD): 120.0
GB/T 24581-2009 Test method for low temperature FT-IR analysis of single crystal silicon for Ⅲ-Ⅴ impurities 
  Issued on: 2009-10-30   Price(USD): 170.0
GB/T 14844-1993 of semiconductor materials 
  Issued on: 1993-1-2   Price(USD): 264.0
GB/T 14264-1993 Semiconductor materials－Terms and definitions 
  Issued on: 1993-03-20   Price(USD): 280.0
GB/T 24578-2009 Test method for measuring surface metal contamination on silicon wafers by total reflection X-ray fluorescence spectroscopy 
  Issued on: 2009-10-30   Price(USD): 210.0
GB/T 14146-2009 Silicon epitaxial layers-determination of carrier concentration-mercury probe voltages-capacitance method 
  Issued on: 2009-10-30   Price(USD): 160.0
YS/T 985-2014 Polished reclaimed silicon wafers 
  Issued on: 2014-10-14   Price(USD): 220.0
GB/T 1553-2009 Test methods for minority carrier lifetime in bulk germanium and silicon by measurement of photoconduetivity decay 
  Issued on: 2009-10-30   Price(USD): 210.0
GB/T 26068-2010 Test method for carrier recombination lifetime in silicon wafers by non-contact measurement of photoconductivity decay by microwave reflectance 
  Issued on: 2011-1-10   Price(USD): 390.0
GB/T 14847-2010 Test method for thickness of lightly doped silicon epitaxial layers on heavily doped silicon substrates by infrared reflectance 
  Issued on: 2011-1-10   Price(USD): 180.0
GB/T 4058-2009 Test method for detection of oxidation induced defects in polished silicon wafers 
  Issued on: 2009-10-30   Price(USD): 300.0
GB/T 14141-2009 Test method for sheet resistance of silicon epitaxial,diffused and ion-implanted layers using a collinear four-probe array 
  Issued on: 2009-10-30   Price(USD): 180.0
YS/T 838-2012 Cadmium Telluride 
  Issued on: 2012-11-7   Price(USD): 210.0
YS/T 679-2008 Test methods for minority carrier diffusion length in extrinsic semiconductors by measurement of steady-steady-state surface photovoltage 
  Issued on: 2008-3-12   Price(USD): 210.0
GB/T 24580-2009 Test method for measuring Boron contamination in heavily doped n-type silicon substrates by secondary ion mass spectrometry 
  Issued on: 2009-10-30   Price(USD): 180.0
GB/T 32279-2015 pecification for order entry format of silicon wafers 
  Issued on: 2015-12-10   Price(USD): 270.0
GB/T 6617-2009 Test method for measuring resistivity of silicon wafer using spreading resistance probe 
  Issued on: 2009-10-30   Price(USD): 150.0
GB/T 13388-2009 Method for measuring crystallographic orientation of flats on single-crystal silicon slices and wafers by X-ray techniques 
  Issued on: 2009-10-30   Price(USD): 180.0
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