Title |
Standard No. |
Implemented On |

Specification for establishing a wafer coordinate system | GB/T 16596-2019 | 2020-2-1 |

Specification for a universal wafer grid | GB/T 16595-2019 | 2020-2-1 |

Designations of semiconductor materials | GB/T 14844-2018 | 2019-11-1 |

Collection of metallographs on defects of germanium crystal | GB/T 8756-2018 | 2019-7-1 |

Specification for alphanumeric marking of silicon wafers | GB/T 34479-2017 | 2018-7-1 |

pecification for order entry format of silicon wafers | GB/T 32279-2015 | 2017-1-1 |

Polished reclaimed silicon wafers | YS/T 985-2014 | 2015-4-1 |

Metallographs Collection for Original Defects of Crystalline Silicon | GB/T 30453-2013 | 2014-10-1 |

Method for net carrier density in silicon epitaxial layers by voltage-capacitance of gated and ungated diodes | GB/T 14863-2013 | 2014-8-15 |

Measuring Methods of Parameters of Hgcdte Epilayers Used for Space Infrared Detectors | GB/T 30110-2013 | 2014-5-15 |

Test method for measuring surface roughness on planar surfaces of silicon wafer | GB/T 29505-2013 | 2014-2-1 |

Practice for evaluation of polocrystalline silicon rods by float-zone crystal growth and spectroscopy | GB/T 29057-2012 | 2013-10-1 |

Cadmium Telluride | YS/T 838-2012 | 2013-3-1 |

Specification for silicon annealed wafers | GB/T 26069-2010 | 2011-10-1 |

Mono-crystalline silicon as cut slices for photovoltaic solar cells | GB/T 26071-2010 | 2011-10-1 |

Test method for carrier recombination lifetime in silicon wafers by non-contact measurement of photoconductivity decay by microwave reflectance | GB/T 26068-2010 | 2011-10-1 |

Test method for thickness of lightly doped silicon epitaxial layers on heavily doped silicon substrates by infrared reflectance | GB/T 14847-2010 | 2011-10-1 |

Practice for shallow etch pit detection on silicon | GB/T 26066-2010 | 2011-10-1 |

Monocrystalline silicon of solar cell | GB/T 25076-2010 | 2011-4-1 |

Gallium arsenide single crystal for solar cell | GB/T 25075-2010 | 2011-4-1 |

Test method for measuring resistivity of silicon wafer using spreading resistance probe | GB/T 6617-2009 | 2010-6-1 |

Test method for measuring Boron contamination in heavily doped n-type silicon substrates by secondary ion mass spectrometry | GB/T 24580-2009 | 2010-6-1 |

Test method for low temperature FT-IR analysis of single crystal silicon for Ⅲ-Ⅴ impurities | GB/T 24581-2009 | 2010-6-1 |

Test methods for minority carrier lifetime in bulk germanium and silicon by measurement of photoconduetivity decay | GB/T 1553-2009 | 2010-6-1 |

Test methods for bow of silicon wafers | GB/T 6619-2009 | 2010-6-1 |

Polycrystalline silicon-examination method-assessment of sandwiches on cross-section by chemical corrosion | GB/T 4061-2009 | 2010-6-1 |

Test method for thickness and total thickness variation of silicon slices | GB/T 6618-2009 | 2010-6-1 |

Testing methods for surface flatness of silicon slices | GB/T 6621-2009 | 2010-6-1 |

Test method for measuring resistivity of monocrystal silicon | GB/T 1551-2009 | 2010-6-1 |

Test methods for analyzing organic contaminants on silicon wafer surfaces by thermal desorption gas chromatography | GB/T 24577-2009 | 2010-6-1 |

Test method for detection of oxidation induced defects in polished silicon wafers | GB/T 4058-2009 | 2010-6-1 |

Method for measuring crystallographic orientation of flats on single-crystal silicon slices and wafers by X-ray techniques | GB/T 13388-2009 | 2010-6-1 |

Test method for measuring surface metal contamination of polycrystalline silicon by acid extraction-atomic absorption spectroscopy | GB/T 24579-2009 | 2010-6-1 |

Testing method for crystallographic perfection of silicon by preferential etch techniques | GB/T 1554-2009 | 2010-6-1 |

Test method for sheet resistance of silicon epitaxial,diffused and ion-implanted layers using a collinear four-probe array | GB/T 14141-2009 | 2010-6-1 |

Test methods for photoluminescence analysis of single crystal silicon for Ⅲ-Ⅴ impurities | GB/T 24574-2009 | 2010-6-1 |

Test method for measuring surface metal contamination on silicon wafers by total reflection X-ray fluorescence spectroscopy | GB/T 24578-2009 | 2010-6-1 |

Test method for measuring the Al fraction in AlGaAs on GaAs substrates by high resolution X-ray diffraction | GB/T 24576-2009 | 2010-6-1 |

Silicon epitaxial layers-determination of carrier concentration-mercury probe voltages-capacitance method | GB/T 14146-2009 | 2010-6-1 |

Test method for substitutional atomic carbon concent of silicon by infrared absorption | GB/T 1558-2009 | 2010-6-1 |

Test methods for measuring resistivity of semiconductor wafers or sheet resistance of semiconductor films with a noncontact eddy-current gauge | GB/T 6616-2009 | 2010-6-1 |

Silicon epitaxial wafers | GB/T 14139-2009 | 2010-6-1 |

Test method for measuring surface metal contamination of polycrystalline silicon by acid extraction-inductively coupled plasma mass spectrometry | GB/T 24582-2009 | 2010-6-1 |

Semiconductor materials - Terms and definitions | GB/T 14264-2009 | 2010-6-1 |

Testing methods for determining the orientation of a semiconductor single crystal | GB/T 1555-2009 | 2010-6-1 |

Test method for measuring flat length wafers of silicon and other electronic materials | GB/T 13387-2009 | 2010-6-1 |

Test methods for minority carrier diffusion length in extrinsic semiconductors by measurement of steady-steady-state surface photovoltage | YS/T 679-2008 | 2008-9-1 |

of semiconductor materials | GB/T 14844-1993 | 1994-9-1 |

Semiconductor materials－Terms and definitions | GB/T 14264-1993 | 1993-1-2 |

Thickness determination for silicon epitaxial layers - Stacking fault method | YS/T 23-1992 | 1993-1-1 |

Test method for defects of extended nails | YS/T 24-1992 | 1993-1-1 |