Standard No.:	GB/T 14863-2013
English Name:	Method for net carrier density in silicon epitaxial layers by voltage-capacitance of gated and ungated diodes
Chinese Name:	用栅控和非栅控二极管的电压电容关系测定硅外延层中净载流子浓度的方法
Chinese Classification:	H80    Semimetal and semiconductor material in general
Professional Classification:	GB    National Standard
ICS Classification:	29.045 29.045    Semiconducting materials 29.045
Source Content Issued by:	AQSIQ;SAC
Issued on:	2013-12-31
Implemented on:	2014-8-15
Status:	abolished
Abolished on:	2017-12-19
Superseding:	GB/T 14863-1993 test method for net carrier density in silicon epitaxial layers by voltage - Capacitance of gated and ungated diodes
Target Language:	English
File Format:	PDF
Word Count:	7000 words
Translation Price(USD):	210.0
Delivery:	via email in 1~3 business day

本标准规定了用栅控和非栅控二极管的电压电容关系测定硅外延层中净载流子浓度的测试方法。
本标准适用于外延层厚度不小于某一最小厚度值相同或相反导电类型衬底上的n型或p型外延层的净载流子浓度测量。本标准也适用于硅抛光片的净载流子浓度测量。