GB/T 37051-2018 English Version, GB/T 37051-2018 Test method for determination of crystal defect density in PV silicon ingot and wafer (English Version)

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GB/T 37051-2018 Test method for determination of crystal defect density in PV silicon ingot and wafer (English Version)
Standard No.:	GB/T 37051-2018	Status:	valid remind me the status change Email:
Target Language:	English	File Format:	PDF
Word Count:	5500 words	Translation Price(USD):	160.0 remind me the price change Email:
Implemented on:	2019-4-1	Delivery:	via email in 1~3 business day

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Standard No.:	GB/T 37051-2018
English Name:	Test method for determination of crystal defect density in PV silicon ingot and wafer
Chinese Name:	太阳能级多晶硅锭、硅片晶体缺陷密度测定方法
Chinese Classification:	H80 Semimetal and semiconductor material in general
Professional Classification:	GB National Standard
ICS Classification:	29.045 29.045 Semiconducting materials 29.045
Issued on:	2018-12-28
Implemented on:	2019-4-1
Status:	valid
Target Language:	English
File Format:	PDF
Word Count:	5500 words
Translation Price(USD):	160.0
Delivery:	via email in 1~3 business day

Standard

GB/T 37051-2018 Test method for determination of crystal defect density in PV silicon ingot and wafer (English Version)
Standard No.	GB/T 37051-2018
Status	valid
Language	English
File Format	PDF
Word Count	5500 words
Price(USD)	160.0
Implemented on	2019-4-1
Delivery	via email in 1~3 business day

Detail of GB/T 37051-2018

Standard No.

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Chinese Classification

Professional Classification

ICS Classification

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Superseding

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Introduction of GB/T 37051-2018

本标准规定了太阳能级多晶硅锭、硅片的晶体缺陷密度测定方法，包含方法概要、试剂和材料、仪器和设备、试样制备、测试步骤、数据处理、精密度、干扰因素和报告。
本标准适用于太阳能级多晶硅锭、硅片晶体缺陷密度的测定。

Contents of GB/T 37051-2018

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Keywords:
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