Code of China Chinese Standard Classification Professional Classification ICS Classification Latest
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GB/T 14844-1993 of semiconductor materials 75.0 via email in 1~3 business day valid
GB/T 1558-2009 Test method for substitutional atomic carbon concent of silicon by infrared absorption 180.0 via email in 1~3 business day valid
GB/T 6616-2009 Test methods for measuring resistivity of semiconductor wafers or sheet resistance of semiconductor films with a noncontact eddy-current gauge 180.0 via email in 1~3 business day valid
GB/T 25076-2010 Monocrystalline silicon of solar cell 180.0 via email in 1~3 business day valid
YS/T 23-1992 Thickness determination for silicon epitaxial layers - Stacking fault method 60.0 via email in 1~3 business day superseded
GB/T 26071-2010 Mono-crystalline silicon as cut slices for photovoltaic solar cells 180.0 via email in 1~3 business day valid
GB/T 14141-2009 Test method for sheet resistance of silicon epitaxial,diffused and ion-implanted layers using a collinear four-probe array 180.0 via email in 1~3 business day valid
GB/T 24577-2009 Test methods for analyzing organic contaminants on silicon wafer surfaces by thermal desorption gas chromatography 210.0 via email in 1~3 business day valid
GB/T 4061-2009 Polycrystalline silicon-examination method-assessment of sandwiches on cross-section by chemical corrosion 120.0 via email in 1~3 business day valid
GB/T 24579-2009 Test method for measuring surface metal contamination of polycrystalline silicon by acid extraction-atomic absorption spectroscopy 210.0 via email in 1~3 business day valid
GB/T 4058-2009 Test method for detection of oxidation induced defects in polished silicon wafers 300.0 via email in 1~3 business day valid
GB/T 26069-2010 Specification for silicon annealed wafers 180.0 via email in 1~3 business day valid
GB/T 6617-2009 Test method for measuring resistivity of silicon wafer using spreading resistance probe 180.0 via email in 1~3 business day valid
GB/T 6618-2009 Test method for thickness and total thickness variation of silicon slices 180.0 via email in 1~3 business day valid
GB/T 14847-2010 Test method for thickness of lightly doped silicon epitaxial layers on heavily doped silicon substrates by infrared reflectance 180.0 via email in 1~3 business day valid
GB/T 26066-2010 Practice for shallow etch pit detection on silicon 120.0 via email in 1~3 business day valid
GB/T 13387-2009 Test method for measuring flat length wafers of silicon and other electronic materials 180.0 via email in 1~3 business day valid
GB/T 13388-2009 Method for measuring crystallographic orientation of flats on single-crystal silicon slices and wafers by X-ray techniques 180.0 via email in 1~3 business day valid
GB/T 1553-2009 Test methods for minority carrier lifetime in bulk germanium and silicon by measurement of photoconduetivity decay 210.0 via email in 1~3 business day valid
GB/T 30110-2013 Measuring Methods of Parameters of Hgcdte Epilayers Used for Space Infrared Detectors 480.0 via email in 1~3 business day valid
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