Code of China Chinese Standard Classification Professional Classification ICS Classification Latest
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GB/T 14844-1993 of semiconductor materials 75.0 via email in 1~3 business day valid
GB/T 1558-2009 Test method for substitutional atomic carbon concent of silicon by infrared absorption 180.0 via email in 1~3 business day valid
GB/T 6616-2009 Test methods for measuring resistivity of semiconductor wafers or sheet resistance of semiconductor films with a noncontact eddy-current gauge 180.0 via email in 1~3 business day valid
GB/T 14146-2009 Silicon epitaxial layers-determination of carrier concentration-mercury probe voltages-capacitance method 180.0 via email in 1~3 business day valid
GB/T 25076-2010 Monocrystalline silicon of solar cell 180.0 via email in 1~3 business day valid
YS/T 23-1992 Thickness determination for silicon epitaxial layers - Stacking fault method 60.0 via email in 1~3 business day superseded
GB/T 26071-2010 Mono-crystalline silicon as cut slices for photovoltaic solar cells 180.0 via email in 1~3 business day valid
GB/T 14264-1993 Semiconductor materials-Terms and definitions 285.0 via email in 1~3 business day superseded
GB/T 14141-2009 Test method for sheet resistance of silicon epitaxial,diffused and ion-implanted layers using a collinear four-probe array 180.0 via email in 1~3 business day valid
GB/T 24580-2009 Test method for measuring Boron contamination in heavily doped n-type silicon substrates by secondary ion mass spectrometry 180.0 via email in 1~3 business day valid
GB/T 26068-2010 Test method for carrier recombination lifetime in silicon wafers by non-contact measurement of photoconductivity decay by microwave reflectance 390.0 via email in 1~3 business day valid
GB/T 6621-2009 Testing methods for surface flatness of silicon slices 120.0 via email in 1~3 business day valid
GB/T 1551-2009 Test method for measuring resistivity of monocrystal silicon 360.0 via email in 1~3 business day valid
GB/T 24576-2009 Test method for measuring the Al fraction in AlGaAs on GaAs substrates by high resolution X-ray diffraction 180.0 via email in 1~3 business day valid
GB/T 24581-2009 Test method for low temperature FT-IR analysis of single crystal silicon for Ⅲ-Ⅴ impurities 180.0 via email in 1~3 business day valid
GB/T 29057-2012 Practice for evaluation of polocrystalline silicon rods by float-zone crystal growth and spectroscopy 270.0 via email in 1~3 business day valid
GB/T 24577-2009 Test methods for analyzing organic contaminants on silicon wafer surfaces by thermal desorption gas chromatography 210.0 via email in 1~3 business day valid
GB/T 4061-2009 Polycrystalline silicon-examination method-assessment of sandwiches on cross-section by chemical corrosion 120.0 via email in 1~3 business day valid
GB/T 24579-2009 Test method for measuring surface metal contamination of polycrystalline silicon by acid extraction-atomic absorption spectroscopy 210.0 via email in 1~3 business day valid
GB/T 4058-2009 Test method for detection of oxidation induced defects in polished silicon wafers 300.0 via email in 1~3 business day valid
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