2025-12-5 10.1.6.65
Code of China Chinese Standard Classification Professional Classification ICS Classification Latest
Position: Search valid to be valid superseded to be superseded abolished to be abolished
Standard No. Title Price(USD) Delivery Status Add to Cart
GB/T 14264-2024 Terminology of semiconductor materials 1260.0 via email in 1~5 business day valid,,2024-11-1
GB/T 43612-2023 Collection of metallographs on defects in silicon carbide crystal materials 735.0 via email in 1~5 business day valid,,2024-7-1
GB/T 29057-2023 Practice for evaluation of polocrystalline silicon rods by float-zone crystal growth and spectroscopy 255.0 via email in 1~3 business day valid,,2024-3-1
GB/T 37051-2018 Test method for determination of crystal defect density in PV silicon ingot and wafer 160.0 via email in 1~3 business day valid,,2019-4-1
GB/T 16596-2019 Specification for establishing a wafer coordinate system 80.0 via email in 1~3 business day valid,,2020-2-1
GB/T 16595-2019 Specification for a universal wafer grid 130.0 via email in 1~3 business day valid,,2020-2-1
GB/T 8756-2018 Collection of metallographs on defects of germanium crystal 610.0 via email in 1~5 business day valid,,2019-7-1
GB/T 14844-2018 Designations of semiconductor materials 160.0 via email in 1~3 business day valid,,2019-11-1
GB/T 25075-2010 Gallium arsenide single crystal for solar cell 140.0 via email in 1~3 business day valid,,2011-4-1
GB/T 24577-2009 Test methods for analyzing organic contaminants on silicon wafer surfaces by thermal desorption gas chromatography 210.0 via email in 1~3 business day valid,,2010-6-1
GB/T 26069-2010 Specification for silicon annealed wafers 180.0 via email in 1~3 business day superseded,2022-10-1,2011-10-1
GB/T 29507-2013 Test method for measuring flatness, thickness and total thickness vsriation on silicon wafers. Automated non-contact scanning 260.0 via email in 1~3 business day valid,,2014-2-1
YS/T 23-1992 Thickness determination for silicon epitaxial layers - Stacking fault method 60.0 via email in 1~3 business day superseded,2016-9-1,1993-1-1
GB/T 1554-2009 Testing method for crystallographic perfection of silicon by preferential etch techniques 360.0 via email in 1~3 business day valid,,2010-6-1
YS/T 24-1992 Test method for defects of extended nails 30.0 via email in 1~3 business day superseded,2016-9-1,1993-1-1
GB/T 30110-2013 Measuring Methods of Parameters of Hgcdte Epilayers Used for Space Infrared Detectors 480.0 via email in 1~3 business day valid,,2014-5-15
GB/T 14264-2009 Semiconductor materials - Terms and definitions 720.0 via email in 1~3 business day superseded2024-11-01,2024-11-1,2010-6-1
GB/T 13387-2009 Test method for measuring flat length wafers of silicon and other electronic materials 150.0 via email in 1~3 business day valid,,2010-6-1
GB/T 30453-2013 Metallographs Collection for Original Defects of Crystalline Silicon 1200.0 via email in 1~3 business day valid,,2014-10-1
GB/T 25076-2010 Monocrystalline silicon of solar cell 180.0 via email in 1~3 business day superseded,2019-6-1,2011-4-1
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GB/T 14264-2024 Terminology of semiconductor materials 
  Issued on: 2024-4-25   Price(USD): 1260.0
GB/T 43612-2023 Collection of metallographs on defects in silicon carbide crystal materials 
  Issued on: 2023-12-28   Price(USD): 735.0
GB/T 29057-2023 Practice for evaluation of polocrystalline silicon rods by float-zone crystal growth and spectroscopy  
  Issued on: 2023-08-06   Price(USD): 255.0
GB/T 37051-2018 Test method for determination of crystal defect density in PV silicon ingot and wafer 
  Issued on: 2018-12-28   Price(USD): 160.0
GB/T 16596-2019 Specification for establishing a wafer coordinate system  
  Issued on: 2019-03-25   Price(USD): 80.0
GB/T 16595-2019 Specification for a universal wafer grid  
  Issued on: 2019-03-25   Price(USD): 130.0
GB/T 8756-2018 Collection of metallographs on defects of germanium crystal 
  Issued on: 2018-12-28   Price(USD): 610.0
GB/T 14844-2018 Designations of semiconductor materials 
  Issued on: 2018-12-28   Price(USD): 160.0
GB/T 25075-2010 Gallium arsenide single crystal for solar cell 
  Issued on: 2010-9-2   Price(USD): 140.0
GB/T 24577-2009 Test methods for analyzing organic contaminants on silicon wafer surfaces by thermal desorption gas chromatography 
  Issued on: 2009-10-30   Price(USD): 210.0
GB/T 26069-2010 Specification for silicon annealed wafers 
  Issued on: 2011-1-10   Price(USD): 180.0
GB/T 29507-2013 Test method for measuring flatness, thickness and total thickness vsriation on silicon wafers. Automated non-contact scanning 
  Issued on: 2013-05-09   Price(USD): 260.0
YS/T 23-1992 Thickness determination for silicon epitaxial layers - Stacking fault method 
  Issued on: 1992-3-9   Price(USD): 60.0
GB/T 1554-2009 Testing method for crystallographic perfection of silicon by preferential etch techniques 
  Issued on: 2009-10-30   Price(USD): 360.0
YS/T 24-1992 Test method for defects of extended nails 
  Issued on: 1992-3-9   Price(USD): 30.0
GB/T 30110-2013 Measuring Methods of Parameters of Hgcdte Epilayers Used for Space Infrared Detectors 
  Issued on: 2013-12-17   Price(USD): 480.0
GB/T 14264-2009 Semiconductor materials - Terms and definitions 
  Issued on: 2009-10-30   Price(USD): 720.0
GB/T 13387-2009 Test method for measuring flat length wafers of silicon and other electronic materials 
  Issued on: 2009-10-30   Price(USD): 150.0
GB/T 30453-2013 Metallographs Collection for Original Defects of Crystalline Silicon 
  Issued on: 2013-12-31   Price(USD): 1200.0
GB/T 25076-2010 Monocrystalline silicon of solar cell 
  Issued on: 2010-9-2   Price(USD): 180.0
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