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Chinese Standard Classification
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| Position: Search | valid to be valid superseded to be superseded abolished to be abolished |
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GB/T 14264-2024 Terminology of semiconductor materials
Issued on: 2024-4-25 Price(USD): 1260.0 |
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GB/T 43612-2023 Collection of metallographs on defects in silicon carbide crystal materials
Issued on: 2023-12-28 Price(USD): 735.0 |
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GB/T 29057-2023 Practice for evaluation of polocrystalline silicon rods by float-zone crystal growth and spectroscopy
Issued on: 2023-08-06 Price(USD): 255.0 |
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GB/T 16596-2019 Specification for establishing a wafer coordinate system
Issued on: 2019-03-25 Price(USD): 80.0 |
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GB/T 16595-2019 Specification for a universal wafer grid
Issued on: 2019-03-25 Price(USD): 130.0 |
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GB/T 14844-2018 Designations of semiconductor materials
Issued on: 2018-12-28 Price(USD): 160.0 |
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GB/T 8756-2018 Collection of metallographs on defects of germanium crystal
Issued on: 2018-12-28 Price(USD): 610.0 |
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GB/T 37051-2018 Test method for determination of crystal defect density in PV silicon ingot and wafer
Issued on: 2018-12-28 Price(USD): 160.0 |
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GB/T 34479-2017 Specification for alphanumeric marking of silicon wafers
Issued on: 2017-10-14 Price(USD): 210.0 |
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GB/T 32279-2015 pecification for order entry format of silicon wafers
Issued on: 2015-12-10 Price(USD): 270.0 |
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YS/T 985-2014 Polished reclaimed silicon wafers
Issued on: 2014-10-14 Price(USD): 220.0 |
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GB/T 30453-2013 Metallographs Collection for Original Defects of Crystalline Silicon
Issued on: 2013-12-31 Price(USD): 1200.0 |
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GB/T 14863-2013 Method for net carrier density in silicon epitaxial layers by voltage-capacitance of gated and ungated diodes
Issued on: 2013-12-31 Price(USD): 210.0 |
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GB/T 30110-2013 Measuring Methods of Parameters of Hgcdte Epilayers Used for Space Infrared Detectors
Issued on: 2013-12-17 Price(USD): 480.0 |
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GB/T 29507-2013 Test method for measuring flatness, thickness and total thickness vsriation on silicon wafers. Automated non-contact scanning
Issued on: 2013-05-09 Price(USD): 260.0 |
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GB/T 29505-2013 Test method for measuring surface roughness on planar surfaces of silicon wafer
Issued on: 2013-5-9 Price(USD): 430.0 |
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GB/T 29057-2012 Practice for evaluation of polocrystalline silicon rods by float-zone crystal growth and spectroscopy
Issued on: 2012-12-31 Price(USD): 270.0 |
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YS/T 838-2012 Cadmium Telluride
Issued on: 2012-11-7 Price(USD): 210.0 |
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GB/T 26069-2010 Specification for silicon annealed wafers
Issued on: 2011-1-10 Price(USD): 180.0 |
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GB/T 26071-2010 Mono-crystalline silicon as cut slices for photovoltaic solar cells
Issued on: 2011-1-10 Price(USD): 180.0 |
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