Codeofchina.com is in charge of this English translation. In case of any doubt about the English translation, the Chinese original shall be considered authoritative.
This standard is developed in accordance with the rules given in GB/T 1.1-2009.
This standard replaces GB/T 1550-1997 Standard methods for measuring conductivity type of extrinsic semiconducting materials, with respect to which, the following main technical changes have been made:
——the application scope is modified as "This standard is applicable to the test of conductivity types of extrinsic semiconducting materials of silicon and germanium, and may serve as a reference for the test of other extrinsic semiconducting materials" (see Clause 1; Clause 1 of Edition 1997);
——the clause “Terms and definitions” is added (see Clause 3);
——the clauses 1.2~1.9 of the former standard are modified to "4.1 General" (see 4.1; 1.2~1.9 of Edition 1997);
——the application scopes of Method A, Method D1 and Method D2 are modified (see 4.1.2, 4.1.5 and 4.1.6; 1.3, 1.6 and 1.7 of Edition 1997);
——Method E (surface photovoltage method) is added to test the conductivity type (see 4.1.7, 4.5, 5.5, 7.6 and 9.5);
——"If the test steps of 9.1~9.5 can obtain stable readings and good sensitivity, it indicates that there is no contamination or oxide layer on the specimen surface. If the reading is unstable or the sensitivity is poor, it indicates that the specimen surface has been contaminated or has an oxide layer. The method in 8.2 may be used for surface treatment of the specimen.” is added (see 9.6);
——the analysis of test results is added (see Clause 10).
This standard was jointly proposed by and is under the jurisdiction of the National Technical Committee on Semiconductor Equipment and Materials of Standardization Administration of China (SAC/TC 203) and the Subcommittee on Materials of National Technical Committee on Semiconductor Equipment and Materials of Standardization Administration of China (SAC/TC 203/SC 2).
The previous editions of this standard are as follows:
——GB 1550-1979 and GB/T 1550-1997;
——GB 5256-1985.
Test methods for conductivity type of extrinsic semiconducting materials
1 Scope
This standard specifies the test methods for conductivity type of extrinsic semiconducting materials.
This standard is applicable to the test of conductivity types of extrinsic semiconducting materials of silicon and germanium, and may serve as a reference for the test of other extrinsic semiconducting materials. The method specified in this standard can ensure a reliable result for materials of the same homogeneous conductivity type; for materials with inhomogeneous conductivity types, areas of different conductivity types may be measured on their surfaces.
This standard is not applicable to testing the conductivity type of layered materials (such as epitaxial wafers).
2 Normative references
The following referenced documents are indispensable for the application of this document. For dated references, only the edition cited applies. For undated references, the latest edition of the referenced document (including any amendments) applies.
GB/T 1551 Test method for measuring resistivity of monocrystal silicon
GB/T 4326 Extrinsic semiconductor single crystals measurement of Hall mobility and Hall coefficient
GB/T 14264 Semiconductor materials -Terms and definitions
3 Terms and definitions
For the purposes of this standard, the terms and definitions given in GB/T 14264 apply.
4 Method summary
4.1 General
4.1.1 This standard includes five test methods: Method A - thermal probe method; Method B - cold probe method; Method C - point-contact rectification method; Method D - all-type method, including Method D1 - all-type rectification Method and Method D2 - all-type thermoelectric potential method; Method E - surface photovoltage method.
4.1.2 Method A is applicable to Type N and Type P germanium materials with a resistivity below 20Ω·cm and Type N and Type P silicon materials with a resistivity below 1,000Ω·cm.
4.1.3 Method B is applicable to Type N and Type P germanium materials with a resistivity below 20Ω·cm and Type N and Type P silicon materials with a resistivity below 1,000Ω·cm.
4.1.4 Method C is applicable to Type N and Type P silicon materials with a resistivity of 1~1,000Ω·cm.
4.1.5 Method D1 is applicable to Type N and Type P germanium materials with a resistivity of 1~36Ω·cm and Type N and Type P silicon materials with a resistivity of 0.1~3,000Ω·cm.
4.1.6 Method D2 is applicable to Type N and Type P silicon materials with a resistivity of 0.2~1Ω·cm.
4.1.7 Method E is applicable to Type N and Type P silicon materials with a resistivity of 0.2~3,000Ω·cm.
4.1.8 Methods A~E may also be used to test extrinsic semiconducting materials beyond the range defined in 4.1.2~4.1.7, but their applicability has not been verified by test.
4.1.9 If no accurate result can be obtained by Methods A~E, it is recommended to use hall-effect test method specified in GB/T 4326 to determine the conductivity type of the specimen.
4.2 Method A (thermal probe method) and Method B (cold probe method)
Two metal probes with different temperatures are used to contact the specimen, and a thermoelectric potential signal is generated between the two probes, from which the conductivity type of the specimen may be detected. The warmer probe appears as the positive pole for Type N specimen while as the negative pole for Type P. This polarity indication may be observed with a voltmeter or microampere with zero center scale. The maximum temperature difference occurs around the heating or cooling probe, so the observed signal polarity is determined according to the conductivity type of the contact parts of the two probes.
4.3 Method C (point-contact rectification method)
The conductivity type of the specimen is determined according to the current direction at the contact between the specimen and the metal point. The metal point contact is the negative pole for Type N specimen while the positive pole for Type P specimen. When an alternating voltage is applied between a metal point contact and another large-area ohmic contact, the current direction may be observed on a current detector, an oscilloscope or a curve tracer with zero center scale. Since rectification will occur at metal point contact, but not at large-area ohmic contact, the current direction is determined according to the conductivity type of the specimen at metal point contact.
Foreword i
1 Scope
2 Normative references
3 Terms and definitions
4 Method summary
5 Interference factors
6 Reagents and materials
7 Instruments and equipment
8 Specimen
9 Test steps
10 Analysis of test results
11 Test report
Codeofchina.com is in charge of this English translation. In case of any doubt about the English translation, the Chinese original shall be considered authoritative.
This standard is developed in accordance with the rules given in GB/T 1.1-2009.
This standard replaces GB/T 1550-1997 Standard methods for measuring conductivity type of extrinsic semiconducting materials, with respect to which, the following main technical changes have been made:
——the application scope is modified as "This standard is applicable to the test of conductivity types of extrinsic semiconducting materials of silicon and germanium, and may serve as a reference for the test of other extrinsic semiconducting materials" (see Clause 1; Clause 1 of Edition 1997);
——the clause “Terms and definitions” is added (see Clause 3);
——the clauses 1.2~1.9 of the former standard are modified to "4.1 General" (see 4.1; 1.2~1.9 of Edition 1997);
——the application scopes of Method A, Method D1 and Method D2 are modified (see 4.1.2, 4.1.5 and 4.1.6; 1.3, 1.6 and 1.7 of Edition 1997);
——Method E (surface photovoltage method) is added to test the conductivity type (see 4.1.7, 4.5, 5.5, 7.6 and 9.5);
——"If the test steps of 9.1~9.5 can obtain stable readings and good sensitivity, it indicates that there is no contamination or oxide layer on the specimen surface. If the reading is unstable or the sensitivity is poor, it indicates that the specimen surface has been contaminated or has an oxide layer. The method in 8.2 may be used for surface treatment of the specimen.” is added (see 9.6);
——the analysis of test results is added (see Clause 10).
This standard was jointly proposed by and is under the jurisdiction of the National Technical Committee on Semiconductor Equipment and Materials of Standardization Administration of China (SAC/TC 203) and the Subcommittee on Materials of National Technical Committee on Semiconductor Equipment and Materials of Standardization Administration of China (SAC/TC 203/SC 2).
The previous editions of this standard are as follows:
——GB 1550-1979 and GB/T 1550-1997;
——GB 5256-1985.
Test methods for conductivity type of extrinsic semiconducting materials
1 Scope
This standard specifies the test methods for conductivity type of extrinsic semiconducting materials.
This standard is applicable to the test of conductivity types of extrinsic semiconducting materials of silicon and germanium, and may serve as a reference for the test of other extrinsic semiconducting materials. The method specified in this standard can ensure a reliable result for materials of the same homogeneous conductivity type; for materials with inhomogeneous conductivity types, areas of different conductivity types may be measured on their surfaces.
This standard is not applicable to testing the conductivity type of layered materials (such as epitaxial wafers).
2 Normative references
The following referenced documents are indispensable for the application of this document. For dated references, only the edition cited applies. For undated references, the latest edition of the referenced document (including any amendments) applies.
GB/T 1551 Test method for measuring resistivity of monocrystal silicon
GB/T 4326 Extrinsic semiconductor single crystals measurement of Hall mobility and Hall coefficient
GB/T 14264 Semiconductor materials -Terms and definitions
3 Terms and definitions
For the purposes of this standard, the terms and definitions given in GB/T 14264 apply.
4 Method summary
4.1 General
4.1.1 This standard includes five test methods: Method A - thermal probe method; Method B - cold probe method; Method C - point-contact rectification method; Method D - all-type method, including Method D1 - all-type rectification Method and Method D2 - all-type thermoelectric potential method; Method E - surface photovoltage method.
4.1.2 Method A is applicable to Type N and Type P germanium materials with a resistivity below 20Ω·cm and Type N and Type P silicon materials with a resistivity below 1,000Ω·cm.
4.1.3 Method B is applicable to Type N and Type P germanium materials with a resistivity below 20Ω·cm and Type N and Type P silicon materials with a resistivity below 1,000Ω·cm.
4.1.4 Method C is applicable to Type N and Type P silicon materials with a resistivity of 1~1,000Ω·cm.
4.1.5 Method D1 is applicable to Type N and Type P germanium materials with a resistivity of 1~36Ω·cm and Type N and Type P silicon materials with a resistivity of 0.1~3,000Ω·cm.
4.1.6 Method D2 is applicable to Type N and Type P silicon materials with a resistivity of 0.2~1Ω·cm.
4.1.7 Method E is applicable to Type N and Type P silicon materials with a resistivity of 0.2~3,000Ω·cm.
4.1.8 Methods A~E may also be used to test extrinsic semiconducting materials beyond the range defined in 4.1.2~4.1.7, but their applicability has not been verified by test.
4.1.9 If no accurate result can be obtained by Methods A~E, it is recommended to use hall-effect test method specified in GB/T 4326 to determine the conductivity type of the specimen.
4.2 Method A (thermal probe method) and Method B (cold probe method)
Two metal probes with different temperatures are used to contact the specimen, and a thermoelectric potential signal is generated between the two probes, from which the conductivity type of the specimen may be detected. The warmer probe appears as the positive pole for Type N specimen while as the negative pole for Type P. This polarity indication may be observed with a voltmeter or microampere with zero center scale. The maximum temperature difference occurs around the heating or cooling probe, so the observed signal polarity is determined according to the conductivity type of the contact parts of the two probes.
4.3 Method C (point-contact rectification method)
The conductivity type of the specimen is determined according to the current direction at the contact between the specimen and the metal point. The metal point contact is the negative pole for Type N specimen while the positive pole for Type P specimen. When an alternating voltage is applied between a metal point contact and another large-area ohmic contact, the current direction may be observed on a current detector, an oscilloscope or a curve tracer with zero center scale. Since rectification will occur at metal point contact, but not at large-area ohmic contact, the current direction is determined according to the conductivity type of the specimen at metal point contact.
Contents of GB/T 1550-2018
Foreword i
1 Scope
2 Normative references
3 Terms and definitions
4 Method summary
5 Interference factors
6 Reagents and materials
7 Instruments and equipment
8 Specimen
9 Test steps
10 Analysis of test results
11 Test report
