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| Chinese National Standard Category: Semiconductor discrete devices in general |
| English Title: | Measurement method of radiation induced traps by deep level transient spectroscopy |
| Chinese Title: | 辐射诱生缺陷的深能级瞬态谱测试方法 |
| Standard No.: | T/CIE 145-2022 |
| Category No.: | L40 |
| Issued by: | CIE |
| Issued on: | 2022-12-31 |
| Implemented on: | |
| Status: | valid |
| Superseded by: | |
| Superseded on: | |
| Abolished on: | |
| Superseding: | |
| Word Count: | 7500 words |
| Similar Standards: | GB/T 4937.16-2025 GB/T 46567.1-2025 GB/T 45722-2025 GB/T 45721.1-2025 GB/T 45718-2025 GB/T 45719-2025 GB/T 45716-2025 DB32/T 4894-2024 GB/T 4937.35-2024 GB/T 4937.34-2024 GB/T 4587-2023 GB/T 4937.26-2023 GB/T 42709.19-2023 GB/T 4937.27-2023 GB/T 4937.23-2023 GB/T 4937.32-2023 GB/T 4937.31-2023 GB/T 4937.42-2023 GB/T 42709.7-2023 GB/T 42706.2-2023 |
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