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Chinese National Standard Category: Semiconductor discrete devices in general

English Title: Measurement method of radiation induced traps by deep level transient spectroscopy
Chinese Title: 辐射诱生缺陷的深能级瞬态谱测试方法
Standard No.: T/CIE 145-2022
Category No.: L40
Issued by: CIE
Issued on: 2022-12-31
Implemented on:
Status: valid
Superseded by:
Superseded on:
Abolished on:
Superseding:
Word Count:7500 words
Similar Standards: GB/T 4937.16-2025   GB/T 46567.1-2025   GB/T 45722-2025   GB/T 45721.1-2025   GB/T 45718-2025   GB/T 45719-2025   GB/T 45716-2025   DB32/T 4894-2024   GB/T 4937.35-2024   GB/T 4937.34-2024   GB/T 4587-2023   GB/T 4937.26-2023   GB/T 42709.19-2023   GB/T 4937.27-2023   GB/T 4937.23-2023   GB/T 4937.32-2023   GB/T 4937.31-2023   GB/T 4937.42-2023   GB/T 42709.7-2023   GB/T 42706.2-2023  
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