2025-12-30 10.8.118.215
Code of China Chinese Classification Professional Classification ICS Classification Latest Value-added Services

Code of China
International Standard List: Semiconducting materials

GB/T 26067-2010 Standard test method for dimensions of notches on silicon wafers 
  Issued on: 2011-1-10   Translation Price(USD): 180.0
GB/T 25075-2010 Gallium arsenide single crystal for solar cell 
  Issued on: 2010-9-2   Translation Price(USD): 140.0
GB/T 25076-2010 Monocrystalline silicon of solar cell 
  Issued on: 2010-9-2   Translation Price(USD): 180.0
GB/T 25074-2010 Solar-grade polycrystalline silicon 
  Issued on: 2010-9-2   Translation Price(USD): 120.0
GB/T 24577-2009 Test methods for analyzing organic contaminants on silicon wafer surfaces by thermal desorption gas chromatography 
  Issued on: 2009-10-30   Translation Price(USD): 210.0
YS/T 724-2009 Metallurgical silicon powder 
  Issued on: 2009-12-4   Translation Price(USD): 160.0
GB/T 1554-2009 Testing method for crystallographic perfection of silicon by preferential etch techniques 
  Issued on: 2009-10-30   Translation Price(USD): 360.0
GB/T 14264-2009 Semiconductor materials - Terms and definitions 
  Issued on: 2009-10-30   Translation Price(USD): 720.0
GB/T 13387-2009 Test method for measuring flat length wafers of silicon and other electronic materials 
  Issued on: 2009-10-30   Translation Price(USD): 150.0
GB/T 11072-2009 Indium antimonide polycrystal,single crystals and as-cut slices 
  Issued on: 2009-10-30   Translation Price(USD): 140.0
GB/T 24576-2009 Test method for measuring the Al fraction in AlGaAs on GaAs substrates by high resolution X-ray diffraction 
  Issued on: 2009-10-30   Translation Price(USD): 170.0
GB/T 24581-2009 Test method for low temperature FT-IR analysis of single crystal silicon for Ⅲ-Ⅴ impurities 
  Issued on: 2009-10-30   Translation Price(USD): 170.0
GB/T 24578-2009 Test method for measuring surface metal contamination on silicon wafers by total reflection X-ray fluorescence spectroscopy 
  Issued on: 2009-10-30   Translation Price(USD): 210.0
GB/T 14146-2009 Silicon epitaxial layers-determination of carrier concentration-mercury probe voltages-capacitance method 
  Issued on: 2009-10-30   Translation Price(USD): 160.0
GB/T 1553-2009 Test methods for minority carrier lifetime in bulk germanium and silicon by measurement of photoconduetivity decay 
  Issued on: 2009-10-30   Translation Price(USD): 210.0
GB/T 4058-2009 Test method for detection of oxidation induced defects in polished silicon wafers 
  Issued on: 2009-10-30   Translation Price(USD): 300.0
GB/T 14141-2009 Test method for sheet resistance of silicon epitaxial,diffused and ion-implanted layers using a collinear four-probe array 
  Issued on: 2009-10-30   Translation Price(USD): 180.0
GB/T 24580-2009 Test method for measuring Boron contamination in heavily doped n-type silicon substrates by secondary ion mass spectrometry 
  Issued on: 2009-10-30   Translation Price(USD): 180.0
GB/T 6617-2009 Test method for measuring resistivity of silicon wafer using spreading resistance probe 
  Issued on: 2009-10-30   Translation Price(USD): 150.0
GB/T 13388-2009 Method for measuring crystallographic orientation of flats on single-crystal silicon slices and wafers by X-ray techniques 
  Issued on: 2009-10-30   Translation Price(USD): 180.0
About Us   |    Contact Us   |    Terms of Service   |    Privacy   |    Cancellation & Refund Policy   |    Payment
Tel: +86-10-8572 5655 | Fax: +86-10-8581 9515 Email: coc@codeofchina.com | Send me a messageQQ: 672269886
Copyright: Beijing COC Tech Co., Ltd. 2008-2040