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Position: Chinese Standard in English/YS/T 23-1992
YS/T 23-1992   Thickness determination for silicon epitaxial layers - Stacking fault method (English Version)
Standard No.: YS/T 23-1992 Status:superseded remind me the status change

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Target Language:English File Format:PDF
Word Count: 2000 words Translation Price(USD):60.0 remind me the price change

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Implemented on:1993-1-1 Delivery: via email in 1~3 business day

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,2016-9-1,1993-1-1,141137295735710DAB5075DC3EA03
Standard No.: YS/T 23-1992
English Name: Thickness determination for silicon epitaxial layers - Stacking fault method
Chinese Name: 硅外延层厚度测定 堆垛层错尺寸法
Chinese Classification: H80    Semimetal and semiconductor material in general
Professional Classification: YS    Professional Standard - Non-ferrous Metal
ICS Classification: 29.045 29.045    Semiconducting materials 29.045
Source Content Issued by: China Nonferrous Metals Industry Corporation
Issued on: 1992-3-9
Implemented on: 1993-1-1
Status: superseded
Superseded by:YS/T 23-2016 Test method for thickness of epitaxial layers-Stacking fault size
Superseded on:2016-9-1
Target Language: English
File Format: PDF
Word Count: 2000 words
Translation Price(USD): 60.0
Delivery: via email in 1~3 business day
本标 准 规 定了根据堆垛层错尺寸测量硅处延层厚度的方法
本标 准 适 用于在<111>,tloo>和(110)晶向的硅单晶衬底仁生长的硅外延层厚度的测缝
外延 层 中 应存在着发育完整的堆垛层错,其大小可用干涉相衬显微镜r:接观察(非破坏性的),或经化学腐蚀后用金相显微镜观察(破坏性的)。测量范围为2^75 um.
Code of China
Standard
YS/T 23-1992  Thickness determination for silicon epitaxial layers - Stacking fault method (English Version)
Standard No.YS/T 23-1992
Statussuperseded
LanguageEnglish
File FormatPDF
Word Count2000 words
Price(USD)60.0
Implemented on1993-1-1
Deliveryvia email in 1~3 business day
Detail of YS/T 23-1992
Standard No.
YS/T 23-1992
English Name
Thickness determination for silicon epitaxial layers - Stacking fault method
Chinese Name
硅外延层厚度测定 堆垛层错尺寸法
Chinese Classification
H80
Professional Classification
YS
ICS Classification
Issued by
China Nonferrous Metals Industry Corporation
Issued on
1992-3-9
Implemented on
1993-1-1
Status
superseded
Superseded by
YS/T 23-2016 Test method for thickness of epitaxial layers-Stacking fault size
Superseded on
2016-9-1
Abolished on
Superseding
Language
English
File Format
PDF
Word Count
2000 words
Price(USD)
60.0
Keywords
YS/T 23-1992, YS 23-1992, YST 23-1992, YS/T23-1992, YS/T 23, YS/T23, YS23-1992, YS 23, YS23, YST23-1992, YST 23, YST23
Introduction of YS/T 23-1992
本标 准 规 定了根据堆垛层错尺寸测量硅处延层厚度的方法
本标 准 适 用于在<111>,tloo>和(110)晶向的硅单晶衬底仁生长的硅外延层厚度的测缝
外延 层 中 应存在着发育完整的堆垛层错,其大小可用干涉相衬显微镜r:接观察(非破坏性的),或经化学腐蚀后用金相显微镜观察(破坏性的)。测量范围为2^75 um.
Contents of YS/T 23-1992
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Keywords:
YS/T 23-1992, YS 23-1992, YST 23-1992, YS/T23-1992, YS/T 23, YS/T23, YS23-1992, YS 23, YS23, YST23-1992, YST 23, YST23