Standard No.:	GB/T 12963-2022
English Name:	Electronic-grade polycrystalline silicon
Chinese Name:	电子级多晶硅
Chinese Classification:	H82    Elemental semiconductor material
Professional Classification:	GB    National Standard
ICS Classification:	29.045 29.045    Semiconducting materials 29.045
Source Content Issued by:	SAMR; SAC
Issued on:	2022-12-30
Implemented on:	2023-7-1
Status:	valid
Superseding:	GB/T 12963-2014 Electronic-grade polycrystalline silicon
Target Language:	English
File Format:	PDF
Word Count:	5500 words
Translation Price(USD):	165.0
Delivery:	via email in 1 business day

GB/T 12963-2022 Electronic-grade polycrystalline silicon 1 Scope This document specifies the designation and classification, technical requirements, test methods, inspection rules, marking, packaging, transportation, storage, accompanying documents and purchase order contents of electronic-grade polycrystalline silicon. This document is applicable to electronic-grade polycrystalline silicon (hereinafter referred to as "polycrystalline silicon") produced from chlorosilane and silane. 2 Normative references The following documents contain provisions which, through reference in this text, constitute provisions of this document. For dated references, only the edition cited applies. For undated references, the latest edition of the referenced document (including any amendments) applies. GB/T 1550 Test methods for conductivity type of extrinsic semiconducting materials GB/T 1551 Test method for measuring resistivity of monocrystal silicon - In-line four-point probe and direct current two-point probe method GB/T 1553 Test methods for minority carrier lifetime in bulk silicon and germanium - Photoconductivity decay method GB/T 1557 Test method for determining interstitial oxygen content in silicon by infrared absorption GB/T 1558 Test method for substitutional carbon content in silicon by infrared absorption GB/T 4059 Test method for phosphorus content in polycrystalline silicon by zone-melting method under controlled atmosphere GB/T 4060 Test method for boron content in polycrystalline silicon by vacuum zone-melting method GB/T 4061 Polycrystalline silicon-examination method-assessment of sandwiches on cross-section by chemical corrosion GB/T 14264 Semiconductor materials - Terms and definitions GB/T 14844 Designations of semiconductor materials GB/T 24574 Test methods for photoluminescence analysis of single crystal silicon for III-V impurities GB/T 24581 Test method for III and V impurities content in single crystal silicon - Low temperature FT-IR analysis method GB/T 24582 Test method for measuring surface metal impurity content of polycrystalline silicon - Acid extraction-inductively coupled plasma mass spectrometry method GB/T 29057 Practice for evaluation of polocrystalline silicon rods by float-zone crystal growth and spectroscopy GB/T 35306 Determination of carbon and oxygen content in single crystal silicon - Low temperature fourier transform infrared spectrometry method GB/T 37049 Test method for the content of metal impurity in electronic grade polysilicon - Inductively coupled-plasma mass spectrometry method 3 Terms and definitions For the purposes of this document, the terms and definitions given in GB/T 14264 apply. 4 Designation and classification 4.1 The designation of polycrystalline silicon shall meet the requirements of GB/T 14844. 4.2 Polycrystalline silicon is classified by shape into block polycrystalline silicon and rod polycrystalline silicon, by conductivity type into n-type and p-type, and by differences in technical indexes into four grades.

Foreword II 1 Scope 2 Normative references 3 Terms and definitions 4 Designation and classification 5 Technical requirements 6 Test methods 7 Inspection rules 8 Marking, packaging, transportation, storage and accompanying documents 9 Purchase order contents